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| New Product SIA517DJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.029 at VGS = 4.5 V N-Channel 12 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.061 at VGS = - 4.5 V P-Channel - 12 0.081 at VGS = - 2.5 V 0.115 at VGS = - 1.8 V 0.170 at VGS = - 1.5 V PowerPAK SC-70-6 Dual FEATURES ID (A) 4.5a 4.5a 4.5a 4.5a - 4.5a - 4.5a - 4.5a - 4.5a 8.2 nC 5.6 nC Qg (Typ.) * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFETs * New Thermally Enhanced PowerPAK(R) SC-70 Package - Small Footprint Area - Low On-Resistance * Compliant to RoHS Directive 2002/95/EC APPLICATIONS * Load Switch for Portable Devices 1 S1 G1 D1 D1 6 G2 5 2.05 mm 4 S2 D2 Part # code 2.05 mm 2 3 D2 D1 S2 Marking Code G2 EEX XXX Lot Traceability and Date Code S1 D2 P-Channel MOSFET G1 Ordering Information: SIA517DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS ID IDM IS N-Channel 12 8 4.5a 4.5a 4.5a, b, c 4.5a, b, c 20 4.5a 1.6b, c 6.5 5 1.9b, c 1.2b, c - 55 to 150 260 - 4.5a - 4.5a - 4.3b, c - 3.8b, c - 15 - 4.5a - 1.6b, c 6.5 5 1.9b, c 1.2b, c P-Channel - 12 Unit V Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Source Drain Current Diode Current A Maximum Power Dissipation PD TJ, Tstg W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e C THERMAL RESISTANCE RATINGS N-Channel Parameter b, f P-Channel Typ. 52 12.5 Max. 65 16 Unit Maximum Junction-to-Ambient C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 C/W. Document Number: 64832 S09-0861-Rev. A, 18-May-09 www.vishay.com 1 t5s Symbol RthJA RthJC Typ. 52 12.5 Max. 65 16 New Product SIA517DJ Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = 250 A VGS = 0 V, ID = - 250 A ID = 250 A ID = - 250 A ID = 250 A ID = - 250 A VDS = VGS, ID = 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 8 V VDS = 12 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V VDS = 12 V, VGS = 0 V, TJ = 55 C VDS = - 12 V, VGS = 0 V, TJ = 55 C On-State Drain Currentb ID(on) VDS 5 V, VGS = 4.5 V VDS - 5 V, VGS = - 4.5 V VGS = 4.5 V, ID = 5 A VGS = - 4.5 V, ID = - 3.6 A VGS = 2.5 V, ID = 4.6 A Drain-Source On-State Resistanceb RDS(on) VGS = - 2.5 V, ID = - 3.2 A VGS = 1.8 V, ID = 4.1 A VGS = - 1.8 V, ID = - 1 A VGS = 1.5 V, ID = 2 A VGS = - 1.5 V, ID = - 1 A Forward Transconductanceb Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss P-Channel VDS = - 6 V, VGS = 0 V, f = 1 MHz VDS = 6 V, VGS = 8 V, ID = 6.5 A Total Gate Charge Qg VDS = - 6 V, VGS = - 8 V, ID = - 4.5 A N-Channel VDS = 6 V, VGS = 4.5 V, ID = 6.5 A Gate-Source Charge Gate-Drain Charge Gate Resistance Qgs Qgd Rg P-Channel VDS = - 6 V, VGS = - 4.5 V, ID = - 4.3 A f = 1 MHz N-Ch N-Channel VDS = 6 V, VGS = 0 V, f = 1 MHz P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.7 2 500 590 160 280 100 250 9.7 13.1 5.6 8.2 0.72 1.2 0.74 2.8 3.5 10 7 20 15 20 8.5 12.5 nC pF gfs VDS = 10 V, ID = 5 A VDS = - 10 V, ID = - 3.6 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 15 - 10 0.024 0.050 0.028 0.066 0.032 0.093 0.042 0.112 21 11 0.029 0.061 0.034 0.081 0.044 0.115 0.065 0.170 S 0.4 - 0.4 12 - 12 12 - 3.1 - 2.5 2.4 1 -1 100 100 1 -1 10 - 10 A A V nA mV/C V Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. www.vishay.com 2 Document Number: 64832 S09-0861-Rev. A, 18-May-09 New Product SIA517DJ Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb N-Channel IF = 5.2 A, dI//dt = 100 A/s, TJ = 25 C P-Channel IF = - 3.8 A, dI/dt = - 100 A/s, TJ = 25 C IS = 5.2 A, VGS = 0 V IS = - 3.4 A, VGS = 0 V TC = 25 C N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.85 - 0.8 20 30 5 12 8 16 12 14 ns 4.5 - 4.5 20 - 10 1.2 - 1.2 40 60 10 24 V ns nC A td(on) tr td(off) tf td(on) tr td(off) tf N-Ch N-Channel VDD = 6 V, RL = 1.2 ID 5.2 A, VGEN = 4.5 V, Rg = 1 P-Channel VDD = - 6 V, RL = 1.6 ID - 3.8 A, VGEN = - 4.5 V, Rg = 1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch N-Channel VDD = 6 V, RL = 1.2 ID 5.2 A, VGEN = 10 V, Rg = 1 P-Channel VDD = - 6 V, RL = 1.6 ID - 3.8 A, VGEN = - 10 V, Rg = 1 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 10 30 10 25 22 30 10 20 5 8 10 12 18 25 10 18 15 40 15 40 30 45 15 30 10 15 15 20 30 40 15 30 ns Symbol Test Conditions Min. Typ. Max. Unit Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 64832 S09-0861-Rev. A, 18-May-09 www.vishay.com 3 New Product SIA517DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 5 VGS = 5 V thru 2 V 15 I D - Drain Current (A) I D - Drain Current (A) 4 3 10 VGS = 1.5 V 2 TC = 25 C 1 TC = 125 C 5 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.0 0.3 0.6 0.9 TC = - 55 C 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.10 800 Transfer Characteristics R DS(on) - On-Resistance () 0.08 VGS = 1.8 V C - Capacitance (pF) VGS = 1.5 V 0.06 600 Ciss 400 Coss 200 0.04 VGS = 2.5 V 0.02 VGS = 4.5 V Crss 0 0.00 0 5 10 ID - Drain Current (A) 15 20 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 6.5 A R DS(on) - On-Resistance 6 VDS = 3 V 4 VDS = 6 V 2 VDS = 9.6 V 1.6 1.5 1.4 1.3 (Normalized) 1.2 1.1 Capacitance VGS - Gate-to-Source Voltage (V) VGS = 4.5 V, 2.5 V, 1.8 V; ID = 5 A VGS = 1.5 V; ID = 2 A 1.0 0.9 0.8 0 0 4 8 12 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 64832 S09-0861-Rev. A, 18-May-09 New Product SIA517DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.08 0.07 R DS(on) - On-Resistance () I S - Source Current (A) TJ = 150 C 10 0.06 0.05 0.04 0.03 ID = 2 A; TJ = 25 C 0.02 0.01 0.1 0.0 0.00 0.0 ID = 5 A; TJ = 25 C ID = 2 A; TJ = 125 C ID = 5 A; TJ = 125 C TJ = 25 C 1 0.2 0.4 0.6 0.8 1.0 1.2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.8 20 On-Resistance vs. Gate-to-Source Voltage 0.7 15 0.6 VGS(th) (V) ID = 250 A 0.5 Power (W) 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by RDS(on)* 10 I D - Drain Current (A) Single Pulse Power (Junction-to-Ambient) 100 s 1 ms 10 ms TA = 25 C Single Pulse 0.1 BVDSS Limited 100 ms, 1 s 10 s, DC 1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 64832 S09-0861-Rev. A, 18-May-09 www.vishay.com 5 New Product SIA517DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 15 8 12 Power Dissipation (W) I D - Drain Current (A) 6 9 4 6 Package Limited 3 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 64832 S09-0861-Rev. A, 18-May-09 New Product SIA517DJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 C/W Single Pulse 0.01 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 64832 S09-0861-Rev. A, 18-May-09 www.vishay.com 7 New Product SIA517DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 15 VGS = 5 V thru 2.5 V 12 I D - Drain Current (A) I D - Drain Current (A) VGS = 2 V 9 4 5 3 6 VGS = 1.5 V 3 VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 TC = 25 C TC = 125 C 1 TC = - 55 C 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.30 1200 Transfer Characteristics 0.25 R DS(on) - On-Resistance () C - Capacitance (pF) VGS = 1.5 V 0.20 VGS = 1.8 V 1000 800 Ciss 600 0.15 0.10 VGS = 2.5 V 400 Crss 200 Coss 0.05 VGS = 4.5 V 0.00 0 3 6 9 12 15 0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 8 ID = 4.5 A VGS - Gate-to-Source Voltage (V) 6 VDS = 6 V VDS = 9.6 V 1.4 1.3 Capacitance VGS = 4.5 V, 2.5 V; ID = 3.6 A R DS(on) - On-Resistance 1.2 (Normalized) VGS = 1.8 V; ID = 1 A 1.1 1.0 0.9 0.8 VGS = 1.5 V; ID = 1 A 4 2 0 0 3 6 9 12 15 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 8 On-Resistance vs. Junction Temperature Document Number: 64832 S09-0861-Rev. A, 18-May-09 New Product SIA517DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 0.15 ID = 1 A R DS(on) - On-Resistance () 0.12 I S - Source Current (A) 10 TJ = 150 C TJ = 25 C 1 0.09 TJ = 125 C 0.06 TJ = 25 C 0.03 0.1 0.0 0.00 0.3 0.6 0.9 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.15 ID = 3.6 A R DS(on) - On-Resistance () 0.12 0.7 0.8 On-Resistance vs. Gate-to-Source Voltage TJ = 125 C 0.06 TJ = 25 C 0.03 VGS(th) (V) 0.09 0.6 ID = 250 A 0.5 0.4 0.00 0 1 2 3 4 5 0.3 - 50 - 25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Temperature (C) On-Resistance vs. Gate-to-Source Voltage 20 Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 15 Power (W) 10 100 s 1 ms 10 ms TA = 25 C Single Pulse 0.1 BVDSS Limited 100 ms 1 s, 10 s DC 10 1 5 0 0.001 0.01 0.1 1 Pulse (s) 10 100 1000 0.01 0.1 Single Pulse Power, Junction-to-Ambient 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 64832 S09-0861-Rev. A, 18-May-09 www.vishay.com 9 New Product SIA517DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 12 8 10 I D - Drain Current (A) Power Dissipation (W) 6 8 6 Package Limited 4 4 2 2 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 64832 S09-0861-Rev. A, 18-May-09 New Product SIA517DJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Square Wave Pulse Duration (s) 10-2 10-1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64832. Document Number: 64832 S09-0861-Rev. A, 18-May-09 www.vishay.com 11 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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